The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

8 Plasma Electronics » 8.6 Plasma Electronics English Session

[10a-M103-1~7] 8.6 Plasma Electronics English Session

Sun. Mar 10, 2019 9:00 AM - 10:45 AM M103 (H103)

Hiroto Matsuura(Osaka Pref. Univ.)

9:45 AM - 10:00 AM

[10a-M103-4] Deposition Control of Carbon Nanoparticles Synthesized Using Ar + CH4 Multi-Hollow Discharges

SungHwa Hwang1, Kunihiro Kamataki1, Naho Itagaki1, Kazunori Koga1, Masaharu Shiratani1 (1.Kyushu Univ. for Kyushu University)

Keywords:multi-hollow discharge plasma chemical vapor deposition, Carbon nanoparticles

Carbon nanoparticles (CNPs) are regarded as one of the central materials in nanotechnology. In this study, we have applied Ar + CH4 multi-hollow discharge plasma chemical vapor deposition (MHDPCVD) process to synthesis of CNPs and their deposition on substrates. The produced particle size was nearly the same in a range between 5 and 30 nm. However, nonlinear deposition rate indicates that the deposition mechanism is not simple.