[10a-M121-1~10] 13.7 Compound and power electron devices and process technology

[10a-M121-6] Simple electrodeless photoelectrochemical (PEC) etching for the vertical GaN devices

〇FUMIMASA HORIKIRI¹, NOBORU FUKUHARA¹, HIROSHI OHTA², NAOMI ASAI², YOSHINOBU NARITA¹, TAKEHIRO YOSHIDA¹, TOMOYOSHI MISHIMA², MASACHIKA TOGUCHI³, KAZUKI MIWA³, TAKETOMO SATO³ (1.SCIOCS, 2.Hosei Univ., 3.Hokkaido Univ.)

Keywords:GaN, Photoelectrochemical, Wet etching

The setup of simple electrodeless photo-assisted electrochemical (PEC) etching was discussed from view point of experimental geometry, which was only dip the sample into the electrolyte under UV irradiation. The sulfate radicals (SO₄^·-) was produced by K₂S₂O₈ with UV as oxidizing agent, which consumed the UV photo-generated extra electrons for the electrodeless. The transmittances were also measured in various concentration of K₂S₂O₈ (aq.) for adjusting the electrolyte depth.