[10a-PA4-1~10] 9.1 Dielectrics, ferroelectrics

[10a-PA4-8] Improvement of Piezoelectric Properties in AlN Thin Film by Yb addition

〇(M1C)Yuki Amano¹, Masato Uehara^1,2, Sri Ayu Anggraini², Kenji Hirata², Hiroshi Yamada^1,2, Morito Akiyama² (1.Kyushu Univ., 2.AIST)

Keywords:piezoelectric material, nitride, thin film

AlN piezoelectric thin film is used for a sensor and a radio frequency filters of smart phone. The material has been expected to be used for the next generation mobile communication system since a drastic improvement in the piezoelectricity was found by adding Sc. Many researchers are investigating alternative elements which are inexpensive than expensive Sc. Yanagitani et al. demonstrated that the electromechanical coupling coefficient k_t² was improved in the Yb_xAl_1-xN to which Yb was added at 0.1<x<0.27. In this study, the preparation condition of Yb_xAl_1-xN was investigated using an experimental design method in detail. As a result, we found that the d₃₃ is about twice that of AlN when x = 0.33.