[10a-S222-1~12] 12.4 有機EL・トランジスタ

▲ [10a-S222-12] Investigation of the Sensing Mechanism of Dual-gate Low-voltage Organic transistor for Pressure Sensing by Quantitative Analysis

〇(D)Olamikunle Osinimu Ogunleye¹、Heisuke Sakai¹、Yuya Ishii²、Hideyuki Murata¹ (1.Japan Advanced Institute of Science and Technology、2.Kyoto Institute of Technology)

キーワード：Organic Field Effect Transistor

Organic pressure sensors have received much attention because their mechanical flexibility and low cost of manufacturing ^1,2. However, there is a need to reduce the operation voltage of the OFETs used in these sensors. Recently, we developed a low-voltage dual-gate organic transistor for pressure sensing³ in which we assumed that the change in threshold voltage (V_th) and drain current (I_D) was due to the charges generated on the piezoelectric layer when compressed. However, the quantitative investigation for these changes in electrical output observed has been lacking. Here, we show a quantitative analysis that describes the sensing mechanism of the pressure sensor.