[10a-S222-1~12] 12.4 Organic light-emitting devices and organic transistors

▼ [10a-S222-6] Improvement in the Performance of Organic Schottky Diodes through Combined Effect of Charge Double Layer and Oxide Interlayer

〇(D)Nikita Kumari¹, Manish Pandey¹, Suichi Nagamatsu¹, Shuzi Hayase¹, Shyam S Pandey¹ (1.Kyushu Inst. of Tech)

Keywords:Organic Schottky Diode, Contact Resistance, Rectification Ratio

Solution processable organic semiconductors with good solution rheology led to their vast implementation as active components in organic electronic devices. Advent of organic CPs have made it possible to fabricate devices under ambient laboratory environment at low cost but due to undesired doping and trap sites should controlled amicably to have reproducible device performance. Although huge scientific efforts has been continued by numerous research groups to interpret and tackle these issues, still a significant advancement is needed. In this work, organic Schottky diodes (OSDs), which is an essential part of high frequency organic electronics, were fabricated with different interfacial structures and film morphology. Their electrical characteristics with emphasis on rectification ratio were analyzed to investigate the combined effect of interfacial layer and charge double layer at the Schottky contact.