[10a-W331-1~10] CS.4 Code-sharing Session of 3.15 & 3.16

▲ [10a-W331-8] Investigation of impact of InGaAsP quantum well on the modulation efficiency of III-V/Si hybrid MOS optical modulator

〇(M2)Dongsheng Lyu¹, Qiang Li¹, Shinichi Takagi¹, Mitsuru Takenaka¹ (1.Univ. Tokyo)

Keywords:optical modulator, semiconductor quantum well

A numerical analysis of the impact of InGaAsP quantum well(QW) on the modulation efficiency of III-V/Si hybrid MOS optical modulator has been done. Thanks to a lighter electron effective mass in narrower bandgap InGaAsP, and the employment of quantum well structure, the modulation efficiency could be improved by more than 20%.