Investigation of impact of InGaAsP quantum well on the modulation efficiency of III-V/Si hybrid MOS optical modulator

Dongsheng Lyu; Qiang Li; Shinichi Takagi; Mitsuru Takenaka

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コードシェアセッション » 【CS.4】3.15 シリコンフォトニクス、3.16 Optics and Photonics English Sessionのコードシェアセッション

[10a-W331-1~10] CS.4 3.15 シリコンフォトニクス、3.16 Optics and Photonics English Sessionのコードシェアセッション

2019年3月10日(日) 09:15 〜 12:15 W331 (W331)

Guangwei Cong(AIST)、八木英樹(住友電工)

11:30 〜 11:45

▲ [10a-W331-8] Investigation of impact of InGaAsP quantum well on the modulation efficiency of III-V/Si hybrid MOS optical modulator

〇(M2)Dongsheng Lyu¹、Qiang Li¹、Shinichi Takagi¹、Mitsuru Takenaka¹ (1.Univ. Tokyo)

キーワード：optical modulator, semiconductor quantum well

A numerical analysis of the impact of InGaAsP quantum well(QW) on the modulation efficiency of III-V/Si hybrid MOS optical modulator has been done. Thanks to a lighter electron effective mass in narrower bandgap InGaAsP, and the employment of quantum well structure, the modulation efficiency could be improved by more than 20%.