2019年第66回応用物理学会春季学術講演会

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22 合同セッションM 「フォノンエンジニアリング」 » 22.1 合同セッションM 「フォノンエンジニアリング」

[10a-W371-1~12] 22.1 合同セッションM 「フォノンエンジニアリング」

2019年3月10日(日) 09:00 〜 12:15 W371 (W371)

塩見 淳一郎(東大)、馬場 寿夫(JST)

10:45 〜 11:00

[10a-W371-7] Heat conduction in silicon thin film with black silicon nanostructures

〇(M2)Xin Huang1、Sergei Gluchko1、Roman Anufriev1、Masahiro Nomura1,2 (1.IIS, Univ. of Tokyo、2.JST PRESTO)

キーワード:Heat conduction, Thermal conductivity, Black silicon

Black silicon (B-Si), nano- and micro-scale silicon pillars fabricated on silicon membrane by nanostructuring has been developed for decades, the optical properties of which was studied intensively in solar cells and other related fields. However, the thermal property of B-Si still remains unknown. In this work, we fabricated B-Si nanostructures by inductively coupled plasma reactive ion etching (ICP-RIE) and investigated the heat transport in them through micro time-domain thermoreflectance (TDTR) method. Our experimental results indicate that the effective thermal conductivity is reduced by 45% at room temperature in silicon membrane due to strong backscattering of thermal phonons by B-Si nanostructures compare to that in the membrane. At low temperature, where the ballisticity of phonon is stronger, B-Si plays a more important role in suppressing heat conduction.