[10a-W541-1~12] 15.4 III-V族窒化物結晶

▲ [10a-W541-6] Dependence of TMAl preflow condition on GaN growth on surface carbonized Si substrates

〇Yifu Zhu¹、Takeshi Momose¹、Yukihiro Shimogaki¹、Momoko Deura¹ (1.Univ. of Tokyo)

キーワード：gallium nitride, TMAl preflow, surface carbonized Si substrates