[10a-W541-1~12] 15.4 III-V-group nitride crystals

[10a-W541-7] CVD growth of BN thin films by using B₂H₆

〇Hisashi Yamada¹, Sho Inotsume^1,2, Toshikazu Yamada¹, Mituaki Shimizu^1,2 (1.AIST-NU, 2.Nagoya-Univ.)

Keywords:boron nitride, B2H6

Hexagonal boron nitride (h-BN) is a wide bandgap semiconductor (~6 eV) and is expected as a material for deep ultraviolet light emitting device. It has a layered structure and can be expected as a peeling layer of GaN based semiconductor. Thin film formation by chemical vapor deposition (CVD) method of h-BN is carried out by using organic metal such as triethylborane (TEB) and halogen compound trichloroborane (BCl₃) Is used. Unlike these materials, diborane (B₂H₆) is expected not to contain C or Cl as a raw material, so it can be expected to be highly purified, but there are few reports on h-BN by CVD. In this report, we report characteristics of BN thin film formed by CVD.