The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[10a-W641-1~10] 6.3 Oxide electronics

Sun. Mar 10, 2019 9:00 AM - 11:45 AM W641 (W641)

Katayama Tsukasa(Univ. Tokyo)

10:30 AM - 10:45 AM

[10a-W641-6] Modulation of VO2-channel conductivity in ferroelectric HfO2 gate three-terminal device

Takeaki Yajima1, Tomonori Nishimura1, Akira Toriumi1 (1.The Univ. of Tokyo)

Keywords:metal-insulator transition, ferroelectricity, Mott transistor

A three-terminal device with the metal-insulator-transition VO2 channel is fabricated by using the ferroelectric HfO2 gate insulator. Due to the polarization reversal in ferroelectric HfO2, the non-volatile modulation of the VO2 channel conductivity is obtained.