2019年第66回応用物理学会春季学術講演会

講演情報

シンポジウム(口頭講演)

シンポジウム » IoT/IoH時代にむけたスピンデバイス

[10p-M101-1~6] IoT/IoH時代にむけたスピンデバイス

2019年3月10日(日) 13:30 〜 16:45 M101 (H101)

齋藤 秀和(産総研)、宗片 比呂夫(東工大)

15:45 〜 16:15

[10p-M101-5] Device Oscillation and Media AC-field Response of MAMR

Thao A Nguyen1、Ian McFadyen1、Zheng Gao1、Terence Lam1、Daniel Bai1、Masato Shiimoto1、Mrugesh Desai1、Terry Olson1、Prakash Manu1、Paul Dorsey1 (1.Western Digital Corp)

キーワード:MAMR, Magnetic Recording, Microwave Assisted Magnetic Recording

Hard Disk Drives have seen more than eight orders of areal density increase over six decades. This has required numerous advances in head and media materials and structures. These advances have pushed magnetic recording to ~1Tbit/in2.
However, in order to write even higher coercivity media, more field is required than the inductive head can provide. Therefore Energy Assisted Magnetic Recording – HAMR (Heat Assisted Magnetic Recording) or MAMR (Microwave Assisted Magnetic Recording) [1] are now being developed and deployed. This Talk will focus on MAMR technology.
The MAMR head has a Spin Torque Oscillator (STO) within the write gap. The microwave field from the STO reduces the switching field of the medium. This enables use of higher anisotropy and higher coercivity media, and thus improves areal density. In this study, we fabricated MAMR heads and confirmed ~20 GHz oscillation peaks. We also confirmed MAMR unique recording characteristics with the fabricated MAMR head and media.