[10p-PA1-1~13] 9.2 ナノ粒子・ナノワイヤ・ナノシート

▲ [10p-PA1-11] On-Demand Electrical Properties of Building-Block Quantum Dots Solid by Assembly Control

〇(D)Ricky Dwi Septianto^1,2、Liming Liu³、Satria Zulkarnaen Bisri^1,2、Yasuhiro Ishida¹、Ferry Iskandar⁴、Nobuhiro Matsushita²、Yoshihiro Iwasa^1,5 (1.RIKEN CEMS、2.Tokyo Inst. Tech.、3.Univ. Tokyo、4.Inst. Tech. Bandung、5.QPEC Univ. Tokyo)

キーワード：Collodial Quantum Dot, Lead Sulfide, Assembly

Colloidal quantum dots (QD) materials have become a great attention among researchers since they show the unique properties beyond their bulk form. Their unique properties are attributed to the quantum confinement effect since the size of materials reduced to their excitonic Bohr radius, thus exhibiting the size-dependent band-gap and discrete energy level. Therefore, they are suitable for many application such as photovoltaic cells, displays, lightings, thermoelectric, etc.^[1] Here we demonstrate the efforts to control the film formation of PbS colloidal QDs as well as the investigation on the influence of the assembly structures to their electrical properties by means of electrolyte-gated field effect transistor (FET). Through this technique, the high carrier accumulation can be produced to virtually fill the charge trap states, thus the comprehensive comparison of the assemblies could be obtained. In brief, three different assembly morphologies of QDs were obtained by three different deposition methods, exhibiting strong influence to their electrical properties, with respect to the high electron mobility (in superlattice) and the high density of the accumulated charge carrier (in porous structure) that can be achieved. These findings demonstrate that each deposition technique of QD assemblies can be specified and tailor-made to satisfy requirements for different applications of this emerging materials.