[10p-PA1-1~13] 9.2 ナノ粒子・ナノワイヤ・ナノシート

▲ [10p-PA1-2] Growth direction, Sn content and crystallinity of Au-Sn catalyzed Ge_1-xSn_x nanowires

〇Yonglie Sun^1,2、Ryo Matsumura¹、Wipakorn Jevasuwan¹、Naoki Fukata^1,2 (1.NIMS、2.Univ. of Tsukuba)

キーワード：nanowire, Germanium Tin

Ge_1-xSn_x nanowire (NW) is a potential candidate material for fabricating next generation Si-compatible electronic and optoelectronic devices with its high carrier mobility and an opportunity for achieving a direct band gap structure by introducing Sn more than 6.5-11 at.%. The practical use requires Ge_1-xSn_x NWs with controllable growth direction, high Sn content and good crystallinity.
Here, we investigated the growth direction, Sn content and crystallinity of Ge_1-xSn_x NWs as the function of Sn concentration over a wide range (0-86%). Ge_1-xSn_x NWs were grown using germane (GeH₄) precursor with Au-Sn catalysts via Vapor-Liquid-Solid (VLS) process. Sn concentration in catalysts was controlled by varying the ratio of deposited Au and Sn and metal Sn in catalysts was used as Sn source instead of precursor gas.