[10p-PB4-1~23] 3.13 Semiconductor optical devices

[10p-PB4-5] X-ray diffraction of GaInAsP/GaInAsP SCH-MQW laser diode on wafer bonded InP/Si substrate

〇Koki Tsushima¹, Hirokazu Sugiyama¹, Kazuki Uchida¹, Xu Han¹, Masaki Aikawa¹, Natsuki Hayasaka¹, Masaki Matsuura¹, Takahiro Ishizaki¹, Takuto Shirai¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

Keywords:laser diode, InP/Si, Direct bonding