The 66th JSAP Spring Meeting, 2019

Presentation information

Poster presentation

17 Nanocarbon Technology » 17 Nanocarbon Technology (Poster)

[10p-PB5-1~55] 17 Nanocarbon Technology (Poster)

Sun. Mar 10, 2019 4:00 PM - 6:00 PM PB5 (PB)

4:00 PM - 6:00 PM

[10p-PB5-35] Shape anisotropy of MoS2 islands grown on vicinal c-sapphire surfaces

〇(M2)Kyohei Takata1, Ryoichi Makino1, Naoto Komatsu1, Shogo Mizuno1, Hiroki Hibino1,2 (1.Kwansei Gakuin Univ., 2.NTT Basic Research Lab.)

Keywords:transition metal dichalcogenide

CVD method is widely used for the synthesis of monolayer TMDC, and alignment of TMDC is reported particularly on a crystal substrate such as sapphire. These shapes are equilateral triangles, and orientations are dependent on the atomic arrangement of the substrate. Therefore, we focused on the step-terrace structure of sapphire and studied the shape anisotropy of single layer MoS2 grown on a slightly tilted sapphire substrate with different from the OFF direction and angle.