2019年第66回応用物理学会春季学術講演会

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一般セッション(口頭講演)

12 有機分子・バイオエレクトロニクス » 12.4 有機EL・トランジスタ

[10p-S222-1~15] 12.4 有機EL・トランジスタ

2019年3月10日(日) 13:45 〜 18:00 S222 (S222)

永瀬 隆(阪府大)、三成 剛生(物材機構)

14:00 〜 14:15

[10p-S222-2] Melt-processing of highly crystalline organic semiconducting layers for organic optoelectronics

JeanCharles Maurice Ribierre1,2、Zhao Li1,2、Masanobu Uchiyama3,4、Tetsuya Aoyama4、Anthony D'Aleo5、Fabrice Mathevet6、Chihaya Adachi1,2 (1.OPERA, Kyushu Univ.、2.JST-ERATO、3.University of Tokyo、4.RIKEN、5.CNRS-UMI、6.Sorbonne University)

キーワード:organic semiconducting thin film, Melt-processing, organic optoelectronics

Organic semiconductors have been intensively investigated and used in a variety of organic optoelectronic devices such as organic light-emitting diodes (OLEDs), organic lasers, organic solar cells and organic field-effect transistors. A number of different techniques including vacuum vapor deposition and spin-coating have been used to deposit them into thin films. Here, we report on a simple and versatile solvent-free and vacuum-free melt-processing method to fabricate organic layers with large crystal size. For this purpose, we used a solution-processable oligo(p-phenylene vinylene) derivative substituted at both extremities with pyrene moieties. The charge transport, photophysical and amplified spontaneous emission properties of the melt-processed films demonstrate that this fabrication method is suitable for the realization of organic electronic and light-emitting devices.