The 66th JSAP Spring Meeting, 2019

Presentation information

Symposium (Oral)

Symposium » Pioneering of Frontier technology for metal oxide novel device I -from thin film fabrication to device creation -

[10p-W241-1~8] Pioneering of Frontier technology for metal oxide novel device I -from thin film fabrication to device creation -

Sun. Mar 10, 2019 1:30 PM - 5:15 PM W241 (W241)

Kosaku Shimizu(Nihon Univ.), Mutsumi Kimura(Ryukoku Univ.)

2:15 PM - 2:45 PM

[10p-W241-2] Heterojunction channel for enhancing performance and reliability of IGZO TFTs

Mamoru Furuta1,2, Daichi Koretomo1, Mehadhi Aman1, Yusaku Magari1 (1.Kochi Univ. of Tech., 2.Research Institute, KUT.)

Keywords:Thin-FIlmTransistor, InGaZnO, Heterojunction channel

The TFT with IGZO heterojunction channel was demonstrated to enhance performance and reliability. In this presentation, we succesfully demonstrated that the IGZO TFT with heterojunction channel consisting of an In-rich-IGZO on the IGZO-111 (In:Ga:Zn= 1:1:1 atm.%).
Both the performance and reliability of the TFT have been improved by heterojunction channel.
We will discuss the carrier transport mechanism in the IGZO hetero-channel TFT based on the results obtained by a device simulation.