The 66th JSAP Spring Meeting, 2019

Presentation information

Symposium (Oral)

Symposium » Pioneering of Frontier technology for metal oxide novel device I -from thin film fabrication to device creation -

[10p-W241-1~8] Pioneering of Frontier technology for metal oxide novel device I -from thin film fabrication to device creation -

Sun. Mar 10, 2019 1:30 PM - 5:15 PM W241 (W241)

Kosaku Shimizu(Nihon Univ.), Mutsumi Kimura(Ryukoku Univ.)

4:00 PM - 4:45 PM

[10p-W241-6] Amorphous Oxide Semiconductors for OLED application

Hideo Hosono1 (1.Tokyo Tech)

Keywords:semiconductor, oxide, organic light emitting diode

Carrier injection and transport materials are key components in OLEDs. We developed novel transparent amorphous oxide semiconductors for this purpose. The materials created are:1. amorphous C12A7 electride for e-injection2. amorphous ZSO for electron transport/injection3. amorphous IMO for hole injection4. ultra wide-gap AOS for NBIS-free TFTs