[10p-W321-1~16] 13.9 化合物太陽電池

▲ [10p-W321-6] Effect of Annealing Temperature in H₂S-free Sulfurization Method for CIS Fabrication

〇(M1)Dwinanri Egyna¹、Kazuyoshi Nakada¹、Akira Yamada¹ (1.Tokyo Tech)

キーワード：CIS solar cell, Sulfurization

The effect of annealing temperature in sulfurization process to fabricate CIS was investigated. The CIS was formed through reaction between sulphur and a precursor Cu-In layer. The annealing temperature was varied between from 300°C to 600°C. The samples were evaluated through XRD, SEM, and EDS measurements. Peaks of CuInS₂ were found in the XRD results with increase of intensity on higher annealing temperature. Cu_2-xS was also found in the samples, suspected to form during the cooling process following annealing.The effect of the annealing temperature on the film adhesiveness was also investigated. Although sulfur and the precursor reacted better in higher temperature, the film adhesiveness decreased for each temperature increment.