[10p-W611-1~14] 16.3 Bulk, thin-film and other silicon-based solar cells

[10p-W611-4] Influence of hygrothermal stress on PID for silicon heterojunction photovoltaic modules

Chizuko Yamamoto¹, Seira Yamaguchi², Keisuke Ohdaira², 〇Atsushi Masuda¹ (1.AIST, 2.JAIST)

Keywords:photovoltaic module, potential-induced degradation, heterojunction

Influence of hygrothermal stress on potential-induced degradation (PID) for silicon heterojunction (SHJ) photovoltaic modules was investigated. It was found that decrease in both short-circuit current density and open-circuit voltage is accelerated with damp-heat test time prior to PID test, suggesting that PID is much influenced by hygrothermal stress.