[10p-W631-1~12] CS.5 6.1 強誘電体薄膜、13.3 絶縁膜技術、13.5 デバイス／配線／集積化技術のコードシェアセッション

▼ [10p-W631-11] Polarization Switching as the Cause of Steep Subthreshold Slope in Ferroelectric FETs

〇(D)Chengji Jin¹、Takuya Saraya¹、Toshiro Hiramoto¹、Masaharu Kobayashi¹ (1.IIS, Univ. of Tokyo)

キーワード：Negative capacitance, steep SS, ferroelectric

For future energy-efficient computing, Ferroelectric FET (FeFET) with steep subthreshold slope (SS) has been proposed. Since the physical mechanism of steep SS is based on negative capacitance (NC) effect of ferroelectric (FE) material, it is also called negative capacitance FET (NCFET). NC effect is original proposed based on the quasi-static theory where the metastable NC region in S-shaped polarization-voltage (P-V) curve of FE can be stabilized by connecting an appropriate positive capacitor. In this work, we show NC effect and sub-60 SS can be explained by classical polarization switching dynamics in a transient aspect without tracing the S-shaped P-V curve. We call it transient NC (TNC).