The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

Code-sharing session » 【CS.5】Code-sharing Session of 6.1 & 13.3 & 13.5

[10p-W631-1~12] CS.5 Code-sharing Session of 6.1 & 13.3 & 13.5

Sun. Mar 10, 2019 1:45 PM - 5:00 PM W631 (W631)

Masaharu Kobayashi(Univ. of Tokyo), Takao Shimizu(Tokyo Tech), Shosuke Fujii(Toshiba Memory)

4:45 PM - 5:00 PM

[10p-W631-12] Simulation on Coherency of Polarization in Ferroelectric Negative Capacitance and Its Evolution Based on TCAD

Hiroyuki Ota1, Tsutomu Ikegami1, Koichi Fukuda1, Junichi Hattori1, Hidehiro Asai1, Kazuhiko Endo1, Shinji Migita1, Akira Toriumi2 (1.AIST, 2.Univ. of Tokyo)

Keywords:ferroelectric, negative capacitance, steep subthreshold

We have simulated the evolution of the polarization from a multidomain state to a single domain state using our in-house TCAD (Impulse TCAD) in which inhomogeneous ferroelectric polarization can be factored in. In our simulation, a double domain polarization state in a metal/ferroelectric/SiO2 layer/metal structure was supposed as an initial state, then the evolution of the polarization was calculated. As a result, we revealed that a single domain polarization is inclined to be formed in the case of the strong couple of the polarization or a larger domain wall thickness more than the device size concerned. Conversely, with diminishing the strength of the polarization coupling, we found that a multidomain polarization is inevitably formed.