[10p-W641-1~17] 6.3 Oxide electronics

△ [10p-W641-17] In-situ observation of Cu-CF in MoO_x/Al₂O₃ double layer CBRAM at low current operation

Ryusuke Ishikawa¹, 〇Katsunori Arima¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹, Masaki Kudo², Syo Matsumura² (1.Hokkaido Univ., 2.Kyushu Univ.)

Keywords:ReRAM, TEM, CBRAM

Since ReRAM has unknown operating mechanism and cause of failure, it is necessary to analyze them and improve reliability. In this study, in-situ TEM observation was performed on the double layer ReRAM. As a result, diffusion of Cu into the insulating layer was suppressed at low voltage and low current driving, and stable resistance change by a specific filament was confirmed. It was also confirmed that even when Cu was diffused in a large amount into the first insulating layer during repetitive operation, it could be recovered by applying multiple negative voltages.