[11a-M101-1~11] CS.9 10.1 新物質・新機能創成（作製・評価技術）, 10.2 スピン基盤技術・萌芽的デバイス技術, 10.3 スピンデバイス・磁気メモリ・ストレージ技術,10.4 半導体スピントロニクス・超伝導・強相関のコードシェアセッション

▲ [11a-M101-2] Spin Hall magnetoresistance in amorphous tungsten/iron-silicon alloy bilayers

Lukasz Pawliszak^1,2、〇Seiji Mitani^2,3、Shinji Isogami²、Masamitsu Hayashi^2,4、Tadeusz Kulik¹ (1.Warsaw Univ. Tech.、2.NIMS、3.Univ. Tsukuba、4.Univ. Tokyo)

キーワード：Spin Hall magnetoresistance

We investigated spin Hall magnetoresiatnce in amorphous W/FeSi bilayers. The SMR obtained for a W(3nm)/FeSi(3nm) bilayer reached 0.8%, which was a little smaller than that of W/CoFeB. In fact, a theoretical model analysis for the FeSi layer thickness dependence of SMR revealed that the magnetoresistance obtained was a sum of 0.7% SMR and 0.1% unconventional anisotropic magnetoresistance (AMR). The latter occurred as a bulk contribution (i.e., independent of the thickness of FeSi) in the SMR measurement geometry.