[11a-M113-1~11] 6.2 Carbon-based thin films

[11a-M113-8] Improvement of crystallinity by high temperature annealing of ion implanted single crystal diamond

〇AKINORI SEKI¹, Taisuke Kageura², Atsushi Hiraiwa^2,3, Hiroshi Kawarada^2,3,4 (1.Toyota Motor Corp., 2.Waseda Univ., 3.Nagoya Univ., 4.Kagami Memorial Research Inst. for Materials Science and Tech.)

Keywords:semiconductor, diamond, ion implantation

The ion implantation technique necessary for making a diamond power device has few reports, and the doping efficiency is as low as 10 to 50% as compared with SiC and the like. In this study, in addition to high temperature implantation, high temperature annealing over 1800 ° C was realized using the DLC surface protective film to improve crystallinity and doping efficiency. We evaluated the crystallinity of implanted diamond using RBS. Boron or aluminum implanted samples had improved crystal quality up to the level of unimplanted diamond substrates. The doping efficiency of the boron implanted sample was over 90%, and this result was similar to SiC.