[11a-M121-1~12] 13.7 Compound and power electron devices and process technology

[11a-M121-12] Elemental distribution analysis around GaAs/GaAs homointerfaces fabricated by surface-activated bonding method

〇Yasuo Shimizu¹, Naoki Ebisawa¹, Yutaka Ohno¹, Jianbo Liang², Naoteru Shigekawa², Koji Inoue¹, Yasuyoshi Nagai¹ (1.IMR Tohoku Univ., 2.Osaka City Univ.)

Keywords:Surface-activated bonding, atom probe, GaAs

本講演では，表面活性化接合（SAB: Surface-activated bonding）法で形成したGaAs/GaAs接合界面に着目し，３次元アトムプローブ法を適用して接合界面近傍における３次元実空間上の元素分布を明らかにするとともに，接合後の熱処理の効果を議論する．