[11a-M121-1~12] 13.7 Compound and power electron devices and process technology

[11a-M121-2] Pulsed-laser Activation of Implanted Mg Acceptors in GaN Grown on GaN Substrates

〇Takao Miyajima¹, Yusuke Yamada¹, Takato Ichikawa¹, Daichi Imai¹, Toshiyuki Sameshima² (1.Meijo Univ., 2.Tokyo Univ. of Agric. & Tech.)

Keywords:GaN-based semiconductors, Ion implantation, Laser annealing

Pulsed-laser annealing with a protected layer of SiNx or AlN was performed for activating Mg acceptors implanted in MOCVD-grown GaN on a GaN substrate. In the cathodo-luminescence spectra, donor-acceptor pair emission with the phonon replicas was clearly observed. We, therefore, concluded that Mg acceptors can be activated by the pulesed laser annealing.