[11a-W641-1~10] 6.3 酸化物エレクトロニクス

▲ [11a-W641-3] Fabrication of p-type CoGa₂O₄ thin film and its photoelectrochemical properties

〇(M1)Jiaxin Chen¹、Hang Zhou¹、Munetoshi Seki¹、Hitoshi Tabata¹ (1.University of Tokyo)

キーワード：p-type semiconductor, photoelectrochemical

The photoelectrical properties of transition metal oxide have a lot of applications such as solar cells and water splitting by sunlight. So far, a number of studies have been done on the photoelectrochemical properties of n-type oxide semiconductors like Fe₂O₃ and TiO₂ for the application to the solar water splitting because of their good stability in water and high responsiveness to visible light. On the contrary, the photoelectrochemical properties of p-type semiconductor materials are not reported a lot because they are unstable and sensible to photocorrosion.
In this study, we focused on a p-type semiconductor oxide CoGa₂O₄ (CGO). Thin films of CGO were fabricated using a pulsed laser deposition (PLD) technique.