1:15 PM - 1:30 PM
[11p-70A-2] Compatibility of dislocation conversion and inclusion suppression in 3 inch SiC solution growth on 4° off substrate
Keywords:SiC, solution growth
Solution method is expected as a method for growing high quality 4H-SiC crystals. So far, we have achieved ultra-high-quality crystal by using two-step growth which using Si–5at%Ti solvent for converting threading dislocation in the first-step and then using Si-Cr solvent for thickening in the second-step. In this study, we investigated the solvent composition in order to apply this to crystal of 3 inch 4 deg off, and achieved achievement of both threading dislocation conversion and suppression of inclusion in the first-step crystal growth.