[11p-M101-8~14] 10.2 スピン基盤技術・萌芽的デバイス技術

▲ [11p-M101-12] Thickness dependence of time-resolved anomalous Nernst effect for L1₀-FePt thin films

〇(M2)Masahiro Saito^1,2、Satoshi Iihama³、Himanshu Sharma^1,5、Shigemi Mizukami^3,4,6、Masato Kotsugi²、Masaki Mizuguchi^1,5,6 (1.IMR Tohoku Univ.、2.Tokyo Univ. of Sci.、3.WPI-AIMR Tohoku univ.、4.CSIS (CRS) Tohoku univ.、5.JST-CREST、6.CSRN Tohoku Univ.)

キーワード：anomalous Nernst effect