2019年第66回応用物理学会春季学術講演会

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一般セッション(口頭講演)

10 スピントロニクス・マグネティクス » 10.3 スピンデバイス・磁気メモリ・ストレージ技術

[11p-M101-15~21] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

2019年3月11日(月) 17:15 〜 19:00 M101 (H101)

近藤 浩太(理研)

17:30 〜 17:45

[11p-M101-16] Microwave emission from magnoise in heat-driven magnetic tunnel junction
with feedback loop circuit

〇(M1)Yuma Yamada1、Minori Goto1,4、Takekazu Yamane2、Naomichi Degawa2、Tsuyoshi Suzuki2、Atsushi Shimura2、Susumu Aoki2、Junichiro Urabe2、Shinji Hara2、Shinji Miwa1,3,4、Yoshishige Suzuki1,4 (1.Osaka Univ.、2.TDK、3.Univ. of Tokyo.、4.CSRN-Osaka)

キーワード:Magnetic tunnel junction, Radio frequency, Amplifier

Magnetic tunnel junction (MTJ) is attracting attention as the next generation microwave signal sources. Recently, it was reported that the microwave reflectivity (S11) from MTJ is amplified by spin-torque from heat-induced magnetic anisotropy change [1]. In addition, we reported that the transmission signal (S21) is amplified with a similar mechanism [2]. In this study, we investigate the microwave emission from magnoise in MTJ, and characterize transmission amplification by the heat-induced torque with feedback loop circuit.
[1] M. Goto et al., Nat. Nanotechnol. (2019). [2] Y. Yamada et al., JSAP Autumn meeting (2018)