[11p-M101-15~21] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

▲ [11p-M101-19] Enhancement of CPP-GMR ratio by Ag-In-Zn-O precursor for spacer layer

〇Tomoya Nakatani¹、Taisuke Sasaki¹、Yuya Sakuraba¹、Kazuhiro Hono¹ (1.NIMS)

キーワード：GMR, Heusler alloy

We report large CPP-GMR ratios by using a new Ag-In-Zn-O material as a precursor of the spacer layer. In the CPP-GMR stack, the Ag-In-Zn-O precursor layer turned to a Ag-In:Mn-Zn-O nanocomposite structure. We obtained CPP-GMR up to 54%, which is thought to be due to the current-confinment effect through the Ag-In paths.