[11p-M101-1~7] CS.9 10.1 新物質・新機能創成（作製・評価技術）, 10.2 スピン基盤技術・萌芽的デバイス技術, 10.3 スピンデバイス・磁気メモリ・ストレージ技術,10.4 半導体スピントロニクス・超伝導・強相関のコードシェアセッション

▼ [11p-M101-7] Static interaction of Skyrmions in magnetic thin-film circuits patterned by anisotropy undulations

〇Chaozhe Liu¹、Yuma Jibiki¹、Soma Miki¹、Jaehun Cho³、Eiichi Tamura¹、Minori Goto^1,2、Hikaru Nomura^1,2、Yoshishige Suzuki^1,2、Ryoichi Nakatani¹ (1.Osaka Univ.、2.CSRN-Osaka、3.KRISS)

キーワード：skyrmion, magnetic anisotropy

Previously, we have shown experimentally that skyrmions can be confined in a canal drawn by magnetic anisotropy undulations. In this study, we estimate the skyrmion-skyrmion and skyrmion-wall interactions that govern the motion of skyrmions in the canal.
First, we observe the 1-dimensional motion of skyrmions in the straight canal with a constant anisotropy gradient, by means of micromagnetism simulator MuMax3. From the obtained velocity we can estimate the force by the anisotropy gradient. Second, we can determine the skyrmion-skyrmion and skyrmion-wall interactions by means of forces in balance.