[11p-PA4-1~13] 15.3 III-V族エピタキシャル結晶・エピタキシーの基礎

▲ [11p-PA4-9] Correlation between the surface morphology and diffusion lengths of Ga adatom in GaP growth by MBE

〇(DC)Jose Alberto Piedra¹、Keisuke Yamane¹、Koki Shota¹、Hiroto Sekiguchi¹、Hiroshi Okada¹、Akihiro Wakahara¹ (1.Toyohashi Univ. of Tech.)

キーワード：Surface Morphology, Gallium Phosphide, semiconductor

In this work Ga adatom incorporation diffusion length was quantified in two different directions, <110> and <1-10>, during MBE growth of GaP layer. Using Atomic Force Microscopy we observed the formation of islands in the surface for different growth conditions. By measuring the length of the islands in the two different directions, a correlation between the diffusion length and the length of the islands was discovered.