The 66th JSAP Spring Meeting, 2019

Presentation information

Poster presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[11p-PA5-1~3] 15.5 Group IV crystals and alloys

Mon. Mar 11, 2019 1:30 PM - 3:30 PM PA5 (PA)

1:30 PM - 3:30 PM

[11p-PA5-1] Evaluation of strain in strained Si films formed on the (110) surface using Raman spectroscopy

Keisuke Arimoto1, Atsushi Onogawa1, Shingo Saito1, Kosuke Hara1, Junji Yamanaka1, Kiyokazu Nakagawa1 (1.Univ. of Yamanashi)

Keywords:strained Si

In order to achieve further performance improvement of integrated circuits, materials with higher carrier mobility are desired. MOSFETs with high hole effective mobility have been demonstrated using tensile-strained Si films which have the (110) surface. We have studied stability of strain in the tensile-strained Si with the (110) surface. In this study, tensile-strained Si/SiGe/Si(110) heterostructures were grown using the solid-source molecular beam epitaxy method, and spatial distribution of strain was investigated by using polarized micro-Raman mapping measurements.