[11p-PA5-1~3] 15.5 Group IV crystals and alloys

[11p-PA5-1] Evaluation of strain in strained Si films formed on the (110) surface using Raman spectroscopy

〇Keisuke Arimoto¹, Atsushi Onogawa¹, Shingo Saito¹, Kosuke Hara¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹ (1.Univ. of Yamanashi)

Keywords:strained Si

In order to achieve further performance improvement of integrated circuits, materials with higher carrier mobility are desired. MOSFETs with high hole effective mobility have been demonstrated using tensile-strained Si films which have the (110) surface. We have studied stability of strain in the tensile-strained Si with the (110) surface. In this study, tensile-strained Si/SiGe/Si(110) heterostructures were grown using the solid-source molecular beam epitaxy method, and spatial distribution of strain was investigated by using polarized micro-Raman mapping measurements.