[11p-PA8-1~5] 9.3 ナノエレクトロニクス

▼ [11p-PA8-5] Modulation of the resistance switching behavior of Ag₂S-based switches using graphene oxide layer

〇(B)Bruno Kenichi Saika¹、Ryota Negishi¹、Yoshihiro Kobayashi¹ (1.Osaka University)

キーワード：atomic switch, Graphene oxide, silver sulfide

Ag₂S-based switches have attracted attention due to its neuromorphic switching operation, in which voltage inputs cause the formation and annihilation of conducting Ag filaments.¹⁾ Since the switching behavior mainly depends on Ag₂S bulk material, enhancing controllable parameters is essential. In this work, a modification to Ag₂S-based switches is proposed by the addition of graphene oxide (GO) thin films.