The 66th JSAP Spring Meeting, 2019

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13 Semiconductors » 13.7 Compound and power electron devices and process technology

[11p-PB3-1~27] 13.7 Compound and power electron devices and process technology

Mon. Mar 11, 2019 1:30 PM - 3:30 PM PB3 (PB)

1:30 PM - 3:30 PM

[11p-PB3-12] Study on MIS interface states of ALD-Al2O3/AlGaInN/AlGaN heterostructures

〇(B)Saki Saito1, Daiki Hosomi1, Keita Furuoka1, Toshiharu Kubo1, Takashi Egawa1, Makoto Miyoshi1 (1.Nagoya Inst. Tech.)

Keywords:AlGaInN, MIS, HFET