[11p-PB3-1~27] 13.7 Compound and power electron devices and process technology

[11p-PB3-14] Evaluation of Carrier Concentration for p-GaN Epitaxial Layers by Schottky Barrier Characteristics

〇Hideaki Matsuyama¹, Katsunori Ueno¹, Shinya Takashima¹, Ryo Tanaka¹, Yuta Fukushima¹, Masaharu Edo¹ (1.Fuji Electric)

Keywords:p-GaN, Hole Concentration, Schottky Barrier Characteristics

Since p-GaN has a deep impurity level, hole concentration can not be evaluated from CV characteristics of a Schottky diode. We attempted to evaluate the hole concentration from the CV measurement by using high frequencies which can not excite charge of impurity.