The 66th JSAP Spring Meeting, 2019

Presentation information

Poster presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[11p-PB3-1~27] 13.7 Compound and power electron devices and process technology

Mon. Mar 11, 2019 1:30 PM - 3:30 PM PB3 (PB)

1:30 PM - 3:30 PM

[11p-PB3-14] Evaluation of Carrier Concentration for p-GaN Epitaxial Layers by Schottky Barrier Characteristics

Hideaki Matsuyama1, Katsunori Ueno1, Shinya Takashima1, Ryo Tanaka1, Yuta Fukushima1, Masaharu Edo1 (1.Fuji Electric)

Keywords:p-GaN, Hole Concentration, Schottky Barrier Characteristics

Since p-GaN has a deep impurity level, hole concentration can not be evaluated from CV characteristics of a Schottky diode. We attempted to evaluate the hole concentration from the CV measurement by using high frequencies which can not excite charge of impurity.