[11p-S422-1~10] 15.3 III-V族エピタキシャル結晶・エピタキシーの基礎

▲ [11p-S422-10] Below-Bandgap Photoluminescence Emission from SI GaAs substrates subjected to pre-MBE-growth annealing

〇(P)Ronel Intal Roca¹、Hiroto Mizuno¹、Mikihito Suzuki¹、Itaru Kamiya¹ (1.Toyota Technological Inst.)

キーワード：GaAs, MBE, annealing

We report the observation of below-GaAs-bandgap photoluminescence (PL) emission from GaAs substrates subjected to thermal annealing during the standard pre-MBE-growth processes. Using below-bandgap excitation as well as backside PL measurements, defects deep within the substrates were probed. A broad PL emission peak at 1000 nm appear after pre-bake annealing at 300° and further defects at 905 and 1150 nm appear after oxide desorption annealing at 600°. These findings confirm the presence of optically-active defects in pre-MBE-growth annealed GaAs substrates.