[11p-S422-1~10] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

△ [11p-S422-4] Growth of InAs/GaAs Bilayer Quantum Dots with Long-wavelength Emission

〇Wenbo Zhan¹, Jinkwan Kwoen¹, Katsuyuki Watanabe¹, Satoshi Iwamoto^1,2, Yasuhiko Arakawa¹ (1.NanoQuine, 2.IIS, Univ. of Tokyo)

Keywords:quantum dots, InAs, bilayer

Since the concept of quantum dots (QDs) was firstly proposed, studies on self-assemble InAs/GaAs QDs and its applications to QD lasers have been widely reported around the world. Because of its advantages in low threshold current density, high efficiency and temperature insensitivity, O-band InAs QD lasers on GaAs have been realized with high performance. Even monolithic InAs QD lasers on on-axis Si (100) has been reported. However, there are few reports on C-band InAs QD lasers on GaAs substrates to date, including InAs/GaAs bilayer QDs and InAs QDs in metamorphic InGaAs matrix. In this report, we demonstrate growth of InAs/GaAs bilayer QDs capped with In_0.2Ga_0.8As strain reduced layer (SRL) and the photoluminescence (PL) peak wavelength at nearly 1.45 μm with a narrow linewidth of 19.5 meV at room temperature (RT)