2019年第66回応用物理学会春季学術講演会

講演情報

一般セッション(口頭講演)

2 放射線 » 2.1 放射線物理一般・検出器基礎

[11p-S622-1~10] 2.1 放射線物理一般・検出器基礎

2019年3月11日(月) 13:00 〜 15:30 S622 (S622)

岡田 豪(金沢工大)

13:15 〜 13:30

[11p-S622-2] Growth and scintillation properties of Ce and Mo co-doped RE3Al5O12 (RE = Y, Lu) single crystal scintillators

KYOUNGJIN KIM1、Kei Kamada2,3、Masao Yoshino1、Yasuhiro Shoji3,1、Vladimir V. Kochurikhin3、Akihiro Yamaji1、Shunsuke Kurosawa2,4、Yuui Yokota2、Yuji Ohashi2、Akira Yoshikawa1,2,3 (1.IMR, Tohoku Univ.、2.NICHe, Tohoku Univ.、3.C&A Corp.、4.Yamagata Univ.)

キーワード:Scintillator, Co-doping, Garnet

The Mo ion co-doped Ce:YAG and Ce:LuAG single crystals were prepared by micro-pulling (m-PD) down method. Absorption and luminescence spectra were measured together with several other scintillation characteristics, namely the scintillation decay and light yield to reveal the effect of the co-doping. In YAG host, the intensity of anti-site defects (Y(Al) or Al(Y)) related emission at 310 nm was decreased by Mo co-doping. The scintillation decays were accelerated, and light yields were increased about 120% by Mo 1000 ppm co-doping. It is guessed that the suppression of shallow electron traps, generated by the anti-site defects, affected this improvement of scintillation properties.