The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[11p-W541-1~20] 15.4 III-V-group nitride crystals

Mon. Mar 11, 2019 1:30 PM - 7:00 PM W541 (W541)

Munetaka Arita(Univ. of Tokyo), Ryuji Katayama(Osaka Univ.), Atsushi Kobayashi(Univ. of Tokyo)

5:00 PM - 5:15 PM

[11p-W541-14] RF-sputter deposition of h-BN films on Al0.7Ga0.3N template

GUODONG HAO1, Shin-Ichiro Inoue1 (1.NICT)

Keywords:h-BN, DUV-LEDs

AlxGa1-xN alloy is widely used in ultraviolet (UV) and deep-UV light emitters. One of the biggest challenges is the high resistivity and the difficulty to form good ohmic contact to high Al-fraction p-type AlxGa1-xN due to the poor p-type doping efficiency. Hexagonal boron nitride (h-BN) is an emerging material that has a large bandgap ((Eg ~ 6 eV)) and is feasible for p-type doping. It is also compatible to AlGaN material, thus is proposed to serve as p-type layer. In this talk, we report the deposition of the high deep-ultraviolet-transparent h-BN film on Al0.7Ga0.3N/sapphire templates by RF sputtering. The hexagonal phase of BN layer was confirmed by both Raman spectra and X-ray diffraction (XRD) measurements. The valence band offset at h-BN/Al0.7Ga0.3N heterointerface is determined to be almost near zero by X-ray photoelectron spectroscopy (XPS) measurement. The transmittance to 265nm deep-ultraviolet light is very high, almost near 100%. We also studied the electrical properties of Mg-doped h-BN. More details will be present at the conference.