The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

3 Optics and Photonics » 3.13 Semiconductor optical devices

[11p-W611-1~12] 3.13 Semiconductor optical devices

Mon. Mar 11, 2019 1:45 PM - 5:00 PM W611 (W611)

Taro Arakawa(Yokohama National Univ.), Shiro Uchida(Chiba Inst. of Tech.)

4:45 PM - 5:00 PM

[11p-W611-12] Mid-infrared GeSn Resonant-cavity-enhanced GeSn Photodetectors

〇(M1)CHENG-HSUN TSAI1, Bo-Jun Huang1, Guo-En Chang1 (1.Nat. Chung Cheng Univ.)

Keywords:GeSn, Photodetector, Resonant cavity

GeSn material system has been considered as a promising candidate for efficient mid-infrared (MIR) photodetectors (PDs) on silicon due to its narrow bandgap and CMOS-compatibility for a wide range of applications. Despite the low equilibrium solid solubility of Sn in Ge, significant progress has been made to grow high-quality, high Sn content GeSn layers on silicon using low-temperature growth techniques. Different types of GeSn-based PDs have also been demonstrated with extended optical responses reaching MIR spectral region. However, the responsivity is still limited. Here we present an investigation of MIR resonant-cavity-enhanced GeSn PDs on silicon-on-insulator (SOI) substrates. We show that the photodetection region can be extened to MIR region by Sn-alloying and the responsiivty can be considerably enahnced by the resonant cavity effect.