[11p-W611-1~12] 3.13 半導体光デバイス

▼ [11p-W611-9] Carrier Transport Modeling in Multiple Quantum Well Based InGaP Solar Cells

〇(D)HsiangHung Huang¹、Kasidit Toprasertpong¹、Kentaroh Watanabe²、Delamarre Amaury¹、Masakazu Sugiyama^1,2、Yoshiaki Nakano¹ (1.Univ. Tokyo、2.RCAST)

キーワード：solar cell, multiple quantum well, InGaP

In_0.49Ga_0.51P solar cells lattice-matched to GaAs substrate have been expected to be good candidates for serving the subcells of multijunction solar cell technology. However, the offset voltage remains unideal and need to be improved. According to the reciprocity relation proposed in a previous research, open-circuit voltage of solar cells can be enhanced by improving the radiative efficiency. One potentail approach is to employ multiple quantum well (MQW) designs over bulk materials. In this work, we attempt to facilitate the cell performance by introducing stress-balanced MQWs into the conventional In_0.49Ga_0.51P host material. To provide a comparable mobility to the In_0.49Ga_0.51P, we employ an effective mobility model proposed by our group, to qualitatively explore the suitable thicknesses and the composition for the MQW designs for improving the cell efficiency.