2019年第66回応用物理学会春季学術講演会

講演情報

一般セッション(口頭講演)

3 光・フォトニクス » 3.13 半導体光デバイス

[11p-W611-1~12] 3.13 半導体光デバイス

2019年3月11日(月) 13:45 〜 17:00 W611 (W611)

荒川 太郎(横国大)、内田 史朗(千葉工大)

16:00 〜 16:15

[11p-W611-9] Carrier Transport Modeling in Multiple Quantum Well Based InGaP Solar Cells

〇(D)HsiangHung Huang1、Kasidit Toprasertpong1、Kentaroh Watanabe2、Delamarre Amaury1、Masakazu Sugiyama1,2、Yoshiaki Nakano1 (1.Univ. Tokyo、2.RCAST)

キーワード:solar cell, multiple quantum well, InGaP

In0.49Ga0.51P solar cells lattice-matched to GaAs substrate have been expected to be good candidates for serving the subcells of multijunction solar cell technology. However, the offset voltage remains unideal and need to be improved. According to the reciprocity relation proposed in a previous research, open-circuit voltage of solar cells can be enhanced by improving the radiative efficiency. One potentail approach is to employ multiple quantum well (MQW) designs over bulk materials. In this work, we attempt to facilitate the cell performance by introducing stress-balanced MQWs into the conventional In0.49Ga0.51P host material. To provide a comparable mobility to the In0.49Ga0.51P, we employ an effective mobility model proposed by our group, to qualitatively explore the suitable thicknesses and the composition for the MQW designs for improving the cell efficiency.