2019年第66回応用物理学会春季学術講演会

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13 半導体 » 13.2 探索的材料物性・基礎物性

[11p-W834-1~18] 13.2 探索的材料物性・基礎物性

2019年3月11日(月) 13:15 〜 18:30 W834 (W834)

末益 崇(筑波大)、立岡 浩一(静大)、山口 憲司(量研機構)、原 康祐(山梨大)

16:15 〜 16:30

[11p-W834-11] Synthesis & Characterization of Ge-based Low Dimensional Material from Zintl Phase Compound, CaGe2

〇(M2)Vimal Saxena1、Hirokazu Tatsuoka1、Yasuhiro Hayakawa2、Naohisa Takahashi3 (1.GSIST Shizuoka Univ.、2.RIE Shizuoka Univ.、3.Yamaha Ad. Ma. Re. G)

キーワード:Zintl Compound, Germanium, Nanosheets

Low dimensional materials have revolutionized intricate applications in the field of atomic-scale electronic devices, surface sciences and energy storage devices by displaying enhanced material properties. With these low-dimensional materials, terahertz frequencies can be reached in atomic scale devices. Enhancement in Li-ion storage capacity of current batteries & improved zT of thermoelectric generators have also been reported by several research groups. In this work we attempt to synthesis & characterize Ge-based nanosheets from CaGe2, a Zintl phase compound, exhibiting layered morphology. A two-stage process methodology has been adopted to synthesis Ge-based nanosheets. Synthesis of CaGe2 was carried out by Vapor Phase Reaction of Ca and Ge used in their stoichiometric ratios. Upon successful synthesis, from the obtained H-functionalized Germanane is exfoliated using IP6 acid by topotactic de-intercalation of Ca atoms from the lattice sites.