[11p-W834-1~18] 13.2 探索的材料物性・基礎物性

▼ [11p-W834-17] Significant photoresponsivity enhancement of BaSi2 epitaxial films by atomic hydrogen passivation

〇(D)Zhihao Xu¹、Tianguo Deng¹、Kaoru Toko¹、Dmitri Migas²、Takashi Suemasu¹ (1.Univ. Tsukuba、2.Belarusian State Univ.)

キーワード：BaSi2, Hydrogen passivation

Semiconducting material BaSi₂ has many advantages for the solar cell application, such as a suitable band gap of 1.3 eV, a large absorption coefficient of 3 × 10⁴ cm^-1 at 1.5 eV, and a large minority-carrier diffusion length of ca. 10 μm [1]. The first-principle calculation predicts Si vacancies to be most likely to occur as point defects in BaSi₂ regardless of Si-rich or Si poor growth condition and lead to the degradation of the minority-carrier properties of BaSi₂[2]. Hence, it is important to make those active defects inactive in the bulk region of BaSi₂ films. In this study, we investigate the effect of atomic H supply on the photoresponsivity of BaSi₂ films and calculate the density of states (DOS) of BaSi₂ having one Si vacancy and with H passivation.