[11p-W933-1~11] Symposium on Crystal Science with Synchrotron Radiation

[11p-W933-7] Local Structural Analysis of GaN-based Mixed Semiconductors and GaN-based Quantum Core-shells by using Synchrotron Radiations

〇Takao Miyajima¹, Ryoma Seiki¹, Tsurugi Kondo¹, Takato Ichikawa¹, Toshiaki Ina², Kiyofumi Nitta², Tomoya Uruga², Kazuki Tsuruta², Kazushi Sumitani², Yasuhiko Imai², Shigeru Kimura², Nobuhiro Yasuda², Makoto Miyoshi³, Daichi Imai¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹ (1.Meijo Univ., 2.JASRI, 3.Nagoya Inst. Tech.)

Keywords:GaN-based semiconductors, X-ray Absorption Fine-structures, X-ray nano-beam

Until now, we analyed the local structure of Ga_1-xIn_xN mixed semiconductor and laterally overgrown GaN by using synchrotron radiations of SPring-8 in order to realize GaN-based semiconductor laser diodes with high performances. In this presentation, we would like to intoroduce our recent works of local structural analysis of Al_1-xIn_xN mixed semiconductor and GaN-based core-shell active layer, which are key materials for improving the wall-plug efficiency of GaN-based semiconductor laser diodes.