The 66th JSAP Spring Meeting, 2019

Presentation information

Print

Poster presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12a-PA3-1~26] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Tue. Mar 12, 2019 9:30 AM - 11:30 AM PA3 (PA)

9:30 AM - 11:30 AM

[12a-PA3-17] Analysis of Schottky diode properties in In-Ga-Zn-O/AgxO hetro interface using device simulation

〇(M2)Kenichiro Hamada1, Yusaku Magari1, Daichi Koretomo1, Kentaro Masuda1, Mamoru Furuta1,2 (1.Kochi Univ of Tech, 2.Resarch Institute, KUT)

Keywords:In-Ga-Zn-O, Schottky diodes, Device Simulation

The IGZO films were deposited by sputtering using mixtures of Ar+O2+H2 as the sputtering gas and Schottky diodes(SDs) were fabricated by a low tempertature process at 150℃. By H2 gas ratio R[H2]=(H2/(Ar+O2/H2)) increased from 0 to 5% rectifying ratio of SDs improved from 1.0×105 to 3.6×109 . It was suggested that the electron affinity and defect level of IGZO are reduced by increasing R[H2]. We investigeted the effect of IGZO electron affinity and defect level on SDs properties using device simulation.